Plummer found the same IGBT mode of operation in the four layer device (SCR) and he first filed a patent application for the device structure in 1978. USP No.4199774 was issued in 1980 and B1 Re33209 was reissued in 1995 for the IGBT mode operation in the four layer device (SCR).
Hans W. Becke and Carl F. Wheatley invented a similar device for which they filed a patent application in 1980, and which they referred to as "power MOSFET with an anode region". This patent has been called "the seminal patent of the Insulated Gate Bipolar Transistor." The patent claimed "no thyristor action occurs under any device operating conditions." This substantially means the non-latch-up IGBT operation for the entire device operation range.
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